 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SLD1134VL 650nm Pulsation Red Laser Diode Description The SLD1134VL is a pulsation red laser diode designed for DVD systems. Features * Low noise * Standard package (5.6mm) Application DVD Structure * AlGaInP quantum well-structure laser diode * PIN photo diode for optical power output monitor Recommended Optical Power Output 4mW Absolute Maximum Ratings (Tc = 25C) * Optical power output Po 5 mW * Reverse voltage VR LD 2 V PD 20 V * Operating temperature Topr -10 to +70 C * Storage temperature Tstg -40 to +85 C M-274 Connection Diagram 3 PD 2 1 COMMON Pin Configuration LD 2 1 3 1. LD Anode 2. PD Anode 3. Common Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E98Y11-PS SLD1134VL Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength Radiation Angle Positional accuracy Perpendicular Parallel Position Angle Ith Iop1 Iop2 1 Vop p // X, Y, Z // D AS Imon PO = 4mW PO = 4mW PO = 4mW VR = 5V 0.05 0.15 0.4 10 0.1 PO = 4mW PO = 4mW PO = 4mW PO = 4mW PO = 4mW 640 25 7 Symbol Conditions Min. Typ. 65 75 Tc: Case temperature Max. 80 90 120 2.3 655 35 8.5 2.8 660 40 12 80 2 3 0.7 Unit mA mA mA V nm degree degree m degree degree mW/mA m 0.25 mA Differential efficiency Astigmatism Monitor current 1 Tc = 70C Handling Precautions Safety goggles for protection from laser beam (1) Eye protection against laser beams The optical output of laser diodes ranges from several mW to 4W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material IR fluorescent plate AP C ATC Optical board Optical power output control device Temperature control device (2) Prevention of surge current and electrostatic discharge Laser diode is most sensitive to electrostatic discharge among semiconductors. When a large current is passed through the laser diode even for an extremely short time (in the order of nanosecond), the strong light emitted from the laser diode promotes deterioration and then laser diodes are destroyed. Therefore, note that the surge current should not flow the laser diode driving circuit from switches and others. Also, if the laser diode is handled carelessly, it may be destructed instantly because electrostatic discharge is easily applied by a human body. Be great careful about excess current and electrostatic discharge. -2- SLD1134VL Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics Tc = 0 25 60 70C 5 Po = 4mW Tc = 25C 4 Po - Optical output [mW] Imon 3 Relative radiant intensity Tc = 0 25 60 70C Far field pattern (FFP) // 2 1 0 0 20 40 60 80 100 0 -40 -20 0 Angle [degree] 20 40 IF - Forward current [mA] 0 0.2 Imon - Monitor current [mA] Threshold current vs. Temperature characteristics 200 Monitor current vs. Temperature characteristics 0.2 Po = 4mW Imon - Monitor current [mA] Ith - Threshold current [mA] 100 0.1 10 -20 0 0 20 40 60 80 -20 0 20 40 60 80 Tc - Case temperature [C] Tc - Case temperature [C] -3- SLD1134VL Temperature dependence of spectrum Po = 4mW Tc = 70C Tc = 60C Relative radiant intensity Tc = 25C Tc = 0C 645 650 655 660 p - Wavelength [nm] 665 670 675 -4- SLD1134VL Power output dependence of spectrum Tc = 25C Po = 5mW Relative radiant intensity Po = 4mW Po = 1mW 645 650 655 660 p - Wavelength [nm] 665 670 675 -5- SLD1134VL Package Outline Unit: mm M-274 Reference Slot 0.5 3 1.0 90 2 1 0 5.6 - 0.025 Window Glass 4.4 MAX 3.7 MAX 1.0 MIN 0.5 MIN 0.4 231 3 - 0.45 PCD 2.0 Optical Distance = 1.35 0.08 SONY CODE EIAJ CODE JEDEC CODE M-274 6.5 LD Chip & Photo Diode 1.2 0.1 Reference Plane 2.6 MAX 0.25 1.26 PACKAGE WEIGHT 0.3g -6- |
Price & Availability of SLD1134VL
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |